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为了提高半导体激光器腔面膜的激光损伤阈值,进而提高激光器输出功率,对激光器的灾变性光学镜面损伤产生的原因进行了探讨。根据损伤原理,将高反膜中场强最大处移出界面,采用光学传输矩阵,对厚度连续变化的界面场强和反射率进行了计算,得到优化高反膜系,优化膜系减小了界面处的光场对薄膜的损伤。采用改进后束流密度更大的LaB6作为阴极原位等离子源,对离子源清洗的参数进行了优化。薄膜制备前期使用离子清洗的方法在真空环境下对腔面进行去氧化,在制备过程中使用电子束蒸发离子源辅助沉积,并测试了薄膜在高温高湿环境下的稳定性。使用该优化的膜系和清洗方法制备的半导体激光器,在准连续输出时,功率由4.6 W提升到了7.02W,工作电流由5A提升到了8A。
In order to improve the laser damage threshold of the semiconductor laser cavity mask and further improve the laser output power, the causes of the catastrophic optical mirror damage of the laser are discussed. According to the principle of damage, the maximum field intensity of high antireflective film was removed from the interface. The optical transmission matrix was used to calculate the field intensity and the reflectivity of continuously varying thickness, which resulted in the optimization of high antireflective film system and the optimized film system. Light field at the film damage. The parameters of ion source cleaning were optimized by using LaB6 with improved beam density as cathode in-situ plasma source. In the early stage of thin film preparation, ion cleaning was used to deoxidize the cavity surface in a vacuum environment. Electron beam evaporation ion source was used to assist deposition in the preparation process. The stability of the film under high temperature and high humidity environment was tested. The semiconductor lasers fabricated using this optimized membrane system and cleaning method deliver a power increase from 4.6 W to 7.02 W at quasi-continuous output and an increase in operating current from 5A to 8A.