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利用高分辨率X射线衍射(HRXRD)和拉曼光谱(Raman spectrum)研究了由扩散引起Si/Si Ge/Si异质结中Si/Si Ge异质界面互混的现象。结果表明:应变弛豫前Si/Si Ge异质界面互混程度随热载荷的增加而增强;Si/Si Ge异质界面的硼(B)浓度梯度抑制了界面互扩散。总之,Si/Si Ge互扩散作用越强诱发Si/Si Ge异质界面越粗糙,从而导致器件性能恶化。
The interdiffusion of Si / Si Ge hetero-interfaces in Si / Si Ge / Si heterostructures caused by diffusion was investigated by HRXRD and Raman spectra. The results show that the intermolecular miscibility of Si / SiGe heterogeneous interface increases with the increase of thermal load before strain relaxation. The boron (B) concentration gradient of Si / Si Ge intercalated interface suppresses interdiffusion. In conclusion, the stronger interdiffusion of Si / SiGe induces the rougher the heterogeneous interface of Si / SiGe, which leads to the deterioration of device performance.