随着CMOS集成电路特征尺寸的不断缩小,特别是在其发展到深亚微米阶段之后,CMOS器件面临着负偏置温度的不稳定性、栅氧化层经时击穿、互连系统的电迁移和热载流子注入等可靠性问题。重点对近年来研究得到的深亚微米CMOS器件可靠性机理及其可靠性模型进行了总结。 As feature sizes of CMOS integrated circuits continue to shrink, CMOS devices are exposed to instabilities of negative bias temperatures, breakdown of gate oxide breakdown, and electromigration of interconnected systems, particularly after their development into deep submicron stages And hot carrier injection and other reliability issues. The research focuses on the reliability mechanism and reliability model of deep submicron CMOS devices obtained in recent years.