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研究了 Si1 - x- y Gex Cy 三元系材料的应变补偿特性 ,分析了固相外延方法制备的样品中注入离子的分布对应变补偿效果的影响 ,指出由于 Ge和 C的投影射程及标准偏差不同 ,二者在各处的组分比并不恒定 ,存在着纵向分布 ,因此各处的应变补偿情况也不尽相同 .利用高斯公式对不同位置的应变补偿效果进行了分析 ,得出了外延层中存在应变完全补偿区域时 Ge、C的峰值浓度比 NGe/ NC应满足一定的取值范围 .通过制备不同 C组分的样品对上述结论进行了验证 ,得出的结果与理论预言基本相符
The strain compensation characteristics of Si1 - x - y Gex Cy ternary materials were studied. The influence of the ion implantation distribution on the strain compensation effect was analyzed. It is pointed out that due to the projection range and standard deviation of Ge and C Different, the ratio between the two components is not constant, there is a vertical distribution, so the strain compensation situation is not the same everywhere.Using Gaussian formula for different positions of the strain compensation effect was analyzed, obtained the extension The peak concentration ratio of Ge and C should meet a certain range of values in the region where strain completely compensates the region.The above conclusions are verified by preparing samples with different C components and the results are in good agreement with the theoretical predictions