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对RTD/HEMT串联型共振隧穿三极管进行了设计和研制.测量结果表明:最大电流峰谷比为17.6∶1,栅压对峰值电压调控能力在1.5～7.7范围内,-3dB截止频率为4GHz,此种器件可与HEMT在结构和工艺上兼容,可应用于HEMT高速电路.
The RTD / HEMT tandem resonant tunneling transistor is designed and developed.The measurement results show that the maximum current peak-to-valley ratio is 17.6:1, the gate voltage to peak voltage regulation is in the range of 1.5-7.7, the -3dB cutoff frequency is 4GHz , This kind of device can be structurally and technically compatible with HEMT, can be applied to HEMT high-speed circuit.