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本文简要介绍了液氦表面、半导体表面空间电荷层和化合物半导体异质结界面的二维电子气.积累在选择掺杂GaAs/Al_xGa_(1-x)A_s异质结界面的二维电子气在低温下迁移率剧增.调制掺杂GaAs/Al_xGa_(1-x)A_s超晶格是一个适合于研究量子态和次带能级的系统.因而,异质结界面处二维电子气的研究,不仅可能为新的高速和微波器件的探索打开新的途径,而且还提供了研究量子效应的新领域.
In this paper, two-dimensional electron gas at liquid helium surface, space charge layer at semiconductor surface and compound semiconductor heterojunction interface are briefly introduced. Two-dimensional electron gas accumulated at the interface of selective doping GaAs / Al_xGa_ (1-x) A_s heterojunction The mobility increases rapidly at low temperature.The modulation of doped GaAs / Al_xGa_ (1-x) A_s superlattices is a suitable system for the study of quantum states and subband levels.Therefore, the study of two-dimensional electron gas at the interface of heterojunction , Not only opens new avenues for the exploration of new high-speed and microwave devices, but also provides new areas for studying quantum effects.