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一、引言 半绝缘砷化镓晶体是砷化镓场效应晶体管(FET)的衬底材料,它的质量直接影响FET器件的性能,特别是该器件采用离子注入工艺,衬底材料与器件的关系更为密切。实验证明,不论作为外延衬底还是离子注入衬底,材料的热稳定性和均匀性是影响FET器件的主要因素之一,特别是热稳定性的影响更大。为满足FET器件的要求,我们采用了控制掺杂剂,改变掺杂量以及避免晶体生长过程中的沾污,研制了热稳定性,均匀性较好的半绝缘晶体材料。
I. INTRODUCTION Semi-insulating gallium arsenide is a gallium arsenide field effect transistor (FET) substrate material, its quality directly affects the performance of FET devices, especially the device using ion implantation process, the relationship between the substrate material and the device More close. Experiments show that, as an epitaxial substrate or ion implantation substrate, the thermal stability and uniformity of the material is one of the main factors that affect the FET device, especially the thermal stability. In order to meet the requirements of FET devices, we adopted the control of dopants, doping amount and avoid the process of crystal growth contamination, developed a thermal stability, good uniformity of semi-insulating crystalline material.