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对高压/功率器件,根据其独特的特性,本文提出并论证了一种新型的、适用于通用SPICE物理模型的模拟方法。模拟过程是在没有调整模拟程序代码的情况下,通过利用用户定义的受控程序源,引用一个已定义的子程序来实现的。该子程序定义模型的方程组(不一定以显式)。但是,对描述器件中累积电荷和与端电压相关的准静态端电流的模型方程来说,其联立解要受到SPICE2结点分析的影响。本文通过对一种特殊高压器件(IGT)的模拟。证实了这种方法的可行性。在模拟IGT(绝缘栅晶体管)过程中,对电导率调制和闭锁效应都作了考虑。文中讨论了IGT开关电路的直流和瞬态特征的SPICE模拟方法,并给出了一些具有代表性的测量结果。通过模拟IGT双极/MOS混合结构的动态、静态闭锁效应,论证了HVICCAD(高压集成电路计算机辅助设计)方法的灵活性。
For high-voltage / power devices, according to its unique characteristics, this paper presents and demonstrates a new type of simulation method suitable for the general SPICE physical model. The simulation is done by referencing a defined subroutine with a user-defined source of the controlled program without adjusting the simulation code. This subroutine defines the system of equations (not necessarily explicitly). However, for the model equations that describe the cumulative quiescent current in the device and quasi-quiescent current related to the terminal voltage, their simultaneous solutions are affected by the SPICE2 node analysis. This article simulates a special high-voltage device (IGT). Confirmed the feasibility of this method. In simulating IGT (Insulated Gate Transistor), both conductivity modulation and blocking effects are considered. The paper discusses the SPICE simulation method of DC and transient characteristics of IGT switch circuit, and gives some representative measurement results. By simulating the dynamic and static blocking effects of the IGT bipolar / MOS hybrid structure, the flexibility of HVICCAD (High Voltage Integrated Circuit Computer Aided Design) method is demonstrated.