在离子束溅射和离子辅助沉积光学薄膜技术中,离子源是其中最关键的单元技术之一。通 过测试宽束离子源束流密度的空间分布,研究了影响离子束均匀性分布的两个主要因素:加速电压和E/B。结果表明,随着加速电压的增加,离子束束流密度的分布趋向均匀;而E/B对离子束均匀性的影响不大。 Ion source sputtering is one of the most critical element technologies in ion-beam sputtering and ion-assisted deposition of optical thin films. By testing the spatial distribution of beam flux density of wide beam ion source, two main factors affecting the uniformity of ion beam distribution are studied: accelerating voltage and E / B. The results show that with the increase of accelerating voltage, the beam current density tends to be uniform. However, E / B has little effect on the uniformity of ion beam.