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We have developed a superior solar-blind ultraviolet(UV) photocathode with an Al_xGa_(1-x)N photocathode(x ～ 0.45)in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Before being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition(MOCVD), a reasonable design was made to the photocathode epitaxy structure, focusing on the Al_xGa_(1-x)N: Mg active layer, then followed by a comprehensive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.
We have developed a superior solar-blind ultraviolet (UV) photocathode with an Al x Ga 1-x N photocathode (x ~ 0.45) in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Before being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition (MOCVD), a reasonable design was made to the photocathode epitaxy structure, focusing on the Al x Ga 1- (1-x) N: Mg active layer, then followed by a comprehensive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked at 41.395 mA / W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.