在室温下采用射频磁控溅射法制备了以ZnO薄膜为沟道层的薄膜晶体管(TFTs).研究表明ZnO薄膜在紫外区具有较高的吸收率,并且ZnO-TFTs对紫外光照射较为敏感.因此,进一步深入研究了ZnO-TFTs紫外光照下的输出和转移特性,结果表明,紫外光照将引起较为明显的光响应电流,且经过光照的器件在光源移除7天后,ZnO沟道层中仍能观察到残余电导现象,其原因可以归结为紫外光辐射在ZnO沟道层中引入了一定数量的氧空位施主态缺陷. Thin film transistors (TFTs) with ZnO thin film as the channel layer were prepared by rf magnetron sputtering at room temperature.The results show that the ZnO thin films have higher absorption in the ultraviolet region and the ZnO-TFTs are more sensitive to UV irradiation . Therefore, the output and transfer characteristics of ZnO-TFTs under UV irradiation were further studied. The results show that the UV light irradiation will cause more obvious photoresponsive current, and after the light source is removed for 7 days, the ZnO channel layer The residual conductance can still be observed. The reason can be attributed to the introduction of a certain number of oxygen vacancy donor defects in the ZnO channel layer by ultraviolet radiation.