Thin films of Nd3+-substituted Bi3.15Nd0.85Ti3O12 (BNT) were fabricated on the (111)Pt/TiO2/SiO2/Si substrates by a metalorganic deposition (MOD) technique. These thin films are possessed of a single-phase bismuthlayered structure showing the preferred (001) and (117) orientation. The values of the remanent polarization Pr and coercive field Ec of the BNT thin film are 27μC/cm2 and 157kV/cm, respectively. The results of fatigue and retention tests revealed that the BNT thin film was not fatigued up to 1.44×1010 switching cycles and the retained charge was unchanged after 1×105 s. The leakage current behaviour of the BNT thin film was investigated at room temperature and their conduction mechanisms were also discussed. The Ⅰ-Ⅴ characteristics of the film show the ohmic behaviour for applied field lower than 40 k V/cm. Nonlinearity in the Ⅰ-Ⅴ behaviour was observed at an applied field above 40kV/cm. In the high field region (E＞95 kV/cm) the sample shows Schottky emission.