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报道了一款应用于Ku波段的GaN T/R MMIC。该芯片采用0.15μm GaN HEMT器件工艺制造,集成了T/R组件的接收通道和发射通道,芯片面积7.00mm×3.32mm。研制的MMIC集成了5位数字衰减器、5位数字移相器、前级低噪声放大器、后级低噪声放大器、驱动放大器、功率放大器、公用支路的小信号开关和收发切换的功率开关。在16~17GHz工作频带内测得该芯片接收通道增益大于21dB,噪声系数小于3.5dB;发射通道增益大于20.8dB,饱和功率大于40.8dBm,功率附加效率典型值30%。该芯片上集成的5位数字移相器、5位数字衰减器功能正常,达到设计要求。
Reported a GaN T / R MMIC for the Ku band. The chip is fabricated using 0.15μm GaN HEMT device technology, integrating the receive and transmit channels of the T / R module with a chip area of 7.00mm × 3.32mm. The developed MMIC integrates a 5-bit digital attenuator, a 5-bit digital phase shifter, a front-end low-noise amplifier, a rear-end low noise amplifier, a driver amplifier, a power amplifier, a small signal switch of a common branch and a power switch of a transceiver. The gain of the receiver channel is more than 21dB, the noise figure is less than 3.5dB, the gain of the transmission channel is more than 20.8dB, the saturation power is more than 40.8dBm and the power added efficiency is 30%. The integrated 5-bit digital phase shifter, 5-bit digital attenuator function is normal, to meet the design requirements.