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西方电气公司报导了制备氮化硅的新生产方法,即以标准的扩散炉为设备,用四氯化硅的氨分解法制备氮化硅。该公司已将这种方法制备的无定形氮化硅应用于梁式引线器件芯片的制造中。改用扩散炉来代替过去的外延高频炉,其目的是降低生产成本和提高产量。新的氮化硅淀积系统由以下几部分组成:具有一个石英管的双温区标准扩散炉、氮气源、瓶装氨、四氯化硅蒸发器。因为输运气体有相当大的容量,因此在输运气流进入工作炉(淀积炉)以前,先在预热炉进行预热,这样以减轻淀积炉的加热负担,使工作区有一恒温区分布。作为系统的安全措施,对氨气及四氯化硅蒸发器都装有排风罩。
Western Electric Company reported a new production of silicon nitride production methods, that is, a standard diffusion furnace equipment, silicon tetrachloride ammonia decomposition of silicon nitride. The company has made this method of amorphous silicon nitride applied to the manufacture of beam-leaded device chips. The use of diffusion furnace instead of the previous extension of high-frequency furnace, which aims to reduce production costs and increase production. The new silicon nitride deposition system consists of a dual-zone, standard diffusion furnace with a quartz tube, nitrogen source, bottled ammonia, and silicon tetrachloride evaporator. Because of the considerable capacity of the transport gas, the preheating is preheated in the preheating furnace prior to the transport of the gas stream into the working furnace (deposition furnace) so as to relieve the heating burden on the deposition furnace, leaving the work area with a constant temperature zone distributed. As a safety precaution, exhaust hoods are provided for ammonia and silicon tetrachloride evaporators.