论文部分内容阅读
红外干涉法测量砷化镓外延层厚度是一种较迅速、准确,而又无损的方法。此法一般是用于低阻材料的厚度测量。利用 H800红外分光光度计及 NaCl 或 KBr 棱镜进行测量。测量原理红外干涉法是利用在外延层表面入射的光反射后所呈现的红外干涉条纹,然后根据这些干涉条纹计算而得厚度的。但这样的干涉必须在一定的条件下进行。如外延层的表面要求平
Infrared interferometry to measure gallium arsenide epitaxial layer thickness is a more rapid, accurate and non-destructive method. This method is generally used for the low resistance material thickness measurement. Measurements were made using a H800 infrared spectrophotometer with NaCl or KBr prisms. Measuring principle Infrared interferometry is the use of infrared light incident on the surface of the epitaxial layer after the reflection of the infrared interference fringes, and then calculated from the interference fringes obtained thickness. However, such interference must be carried out under certain conditions. Such as the surface of the epitaxial layer requirements flat