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提出了一种制备Fe_2O_3薄膜的工艺,薄膜在6克分子HCl中的溶解速度和透射光谱均适于做透明光刻掩模(为了便于对位,光刻掩模在589毫微米下应是足够透明的,而在360～400毫微米光谱区域是不透明的)。此方法有两种,一种是Fe电极在CO—CO_2混合气氛中射频或直流溅射,另一种是Fe_2O_3电极在CO—CO_2混合气氛中射频溅射。用金属电极时CO含量一定不能超过82％,用氧化物电极时不能超过87％,这样才能得到具有满意透射光谱的薄膜。使用Fe电极和80％CO与20％CO_2的混合气体时,射频输入功率350瓦,得到的最快沉积速度为120埃/分。对抗磨性、缺陷密度和薄膜形态均作了叙述。
A process for preparing Fe_2O_3 thin film was proposed. The dissolution rate and transmission spectrum of the film in 6g HCl were suitable for the transparent lithography mask (for the purpose of alignment, the lithography mask should be enough at 589nm) Transparent, and opaque in the 360-400 nm spectral region). There are two kinds of this method: one is RF or DC sputtering of Fe electrode in CO-CO_2 mixed atmosphere and the other is RF sputtering of Fe_2O_3 electrode in CO-CO_2 mixed atmosphere. The CO content must not exceed 82% with metal electrodes and 87% with oxide electrodes in order to obtain films with satisfactory transmission spectra. With a Fe electrode and a mixture of 80% CO and 20% CO 2, the RF input power was 350 watts and the fastest deposition rate achieved was 120 Å / min. Abrasion resistance, defect density and film morphology are described.