论文部分内容阅读
对液封直拉 (L EC)非掺磷化铟 (In P)进行 930℃ 80 h的退火可重复制备直径为 5 0和 75 mm的半绝缘 (SI)衬底 .退火是在密封的石英管内纯磷 (PP)或磷化铁 (IP)两种气氛下进行的 .测试结果表明 IP- SI In P衬底具有很好的电学性质和均匀性 ,而 PP- SI的均匀性和电学参数都很差 .在 IP- SI样品的 PL谱中出现与深缺陷有关的荧光峰 .光激电流谱的测量结果表明 :在 IP气氛下退火获得的半绝缘磷化铟中的缺陷明显比 PP- SI磷化铟的要少 .并对退火后磷化铟中形成缺陷的机理进行了探讨
Semi-insulating (SI) substrates with diameters of 50 and 75 mm were annealed at 9430 ° C for 80 h with Liquid-In-Line (L EC) indium-free In In. Annealing was performed on a sealed quartz The results show that the IP-SI In P substrate has good electrical properties and uniformity, while the uniformity of PP-SI and the electrical parameters Were poor.The PL spectra of IP-SI samples showed the fluorescence peaks associated with deep defects.The results of photoluminescence (PL) measurements showed that the defects in semi-insulating indium phosphide obtained by annealing in IP atmosphere were significantly lower than those in PP- SI is less indium phosphide, and the mechanism of the formation of defects in indium phosphide after annealing is discussed