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研究了Ar+刻蚀对InGaAs,n-InP和p-InP表面的损伤,并用湿法腐蚀后处理消除损伤.Ar+刻蚀后InGaAs表面均方根粗糙度较小,而n-InP和p-InP表面明显变粗糙.刻蚀后InGaAsPL强度增加,而n-InP和p-InPPL强度都减小.用XPS分析了未刻蚀、Ar+刻蚀和湿法腐蚀后处理三种情况下样品表面原子含量.刻蚀后InGaAs表面In和Ga含量明显增加,n-InP和p-InP表面有严重P缺失.湿法腐蚀后,样品表面原子含量和未刻蚀前基本一致.
The damage of InGaAs, n-InP and p-InP on the surface of InGaAs, n-InP and p-InP was studied and wet etching was used to eliminate the damage. The root mean square roughness of InGaAs surface after Ar + The surface is obviously roughened.The intensity of InGaAsPL increases after etching, while the intensity of n-InP and p-InPPL decreases.Under the conditions of non-etching, Ar + etching and wet etching, After InGaAs etching, the In and Ga contents of InGaAs surface increase obviously, and the surface of n-InP and p-InP have serious P loss.After wet etching, the atomic content of sample surface is basically the same as that before etching.