【摘 要】
：
SrTi1-yMgyO3 films were synthesized through sol-gel method on p+-Si substrates.The effects of Mg doping concentration on the microstructure,switching behavior and properties of SrTi1-yMgyO3 films were investigated.All SrTi1-yMgyO3 films are polycrystallin
【机 构】
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School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 5410
【出 处】
：
武汉理工大学学报（材料科学版）（英文版）
论文部分内容阅读
SrTi1-yMgyO3 films were synthesized through sol-gel method on p+-Si substrates.The effects of Mg doping concentration on the microstructure,switching behavior and properties of SrTi1-yMgyO3 films were investigated.All SrTi1-yMgyO3 films are polycrystalline,but the grain becomes coarser,and the number of holes is reduced when the Mg doping content increases from 0.04 to 0.16.SrTi1-yMgyO3 films with different Mg doping concentrations all show bipolar resistive switching behaviors but display some differences in switching properties.When y =0.08,the SrTi1-yMgyO3 films show the largest RHRs/RLRs of l05 and better fatigue endurance after 103 cycles.When y ≥ 0.08,the distribution of Vset and Vreset is narrow,indicating good stability of writing and erasing data for a resistive random access memory.At high-resistance state,the dominant conduction mechanism of SrTi1-yMgyO3 films is the Schottky emission mechanism.However,at low-resistance state,the dominant conduction mechanisms are the filamentary conduction and changes to space charge limited current wheny =0.16.
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