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组成MOS大规模集成电路的MOS器件向着微型化方向发展。但是器件尺寸缩小之后,出现了短沟道效应。为了避免短沟道效应的发生,自73年以来提出了各种各样的工艺技术。本文简略讨论了目前已提出的一些短沟道MOS器件工艺的基本过程及其特点,介绍了已达到的技术水平,指出V—MOS(主要是D—V-MOS)和MSA MOS工艺是很有前途的,应该得到重视。
The MOS devices that make up MOS large-scale integrated circuits are moving toward miniaturization. However, after the device size is reduced, a short channel effect occurs. In order to avoid the short channel effect, a variety of process technologies have been proposed since the 73rd year. This article briefly discusses the basic processes and characteristics of some short-channel MOS devices that have been proposed so far. The technical level achieved has been introduced. It is pointed out that V-MOS (mainly D-V-MOS) and MSA MOS processes are very promising Future, deserve attention.