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The nanosize AlN particles wereprepared by evaporation-condensation method in DCarc nitrogen plasma. Aluminium of high purity(99. 999% ) was evaporated and nitrided in nitro-gen plasma by use of high temperature and high re-activity of plasma gas. The purity of nanosize AlNparticles is more than 98% (wt%) and the averageparticle size is about 50nm. The grain growth ofnanosize AlN particle is also studied. The resultsshow that the nanosize AlN particle begins to growup at 900℃ and the grain growth increase rapidlyat 1100℃. When the temperature is increased to1600℃, the surface of nanosize AlN particle hasbeen sintered softly. Results will be beneficial to prepare AlN ceramics.
The nanosize AlN particles wereprepared by evaporation-condensation method in DCarc nitrogen plasma. Aluminum of high purity (99.999%) was evaporated and nitrided in nitro-gen plasma by use of high temperature and high re-activity of plasma gas. The resultsshow that the nanosize AlN particles start to grow at 900 ° C and the grain growth increase rapidlyat 1100, and the average particle size is about 50 nm. ° C. When the temperature is increased to 1600 ° C, the surface of the nanosize AlN particle hasbeen sintered softly.