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自1979年Potember与其合作者首次报道了铜的四氰基苯醌对二甲烷(7,7’,8,8＇-tetracyanoquinodimethan,简称TCNQ)的电荷转移(CT)复合物有机薄膜具有电流控制的电学开关现象以来,陆续发现了过渡金属(Cu,Ag)TCNQ及其一系列衍生物有机薄膜的电学或光电阈值开关与存贮特性.这些具有极重要应用前景的特性缘于材料中发生的部分场致相变.由这些部分相变形成了所谓的高电导畴或低阻通道.已有结果表明,促使形成这些通道的条件与测量用金属电极/有机薄膜的界面以及薄膜的微观形貌有着十分密切的关系.界面条件
Since 1979, Potember and its collaborators reported for the first time that the charge-transfer (CT) composite organic thin films of copper tetracyanoquinone p-methane (7,7 ’, 8,8’-tetracyanoquinodimethan, referred to as TCNQ) Electrical switch phenomenon, one after another found that the transition metal (Cu, Ag) TCNQ and a series of derivatives of organic thin film electrical or optical threshold switching and storage characteristics of these have extremely important application prospects due to the material occurred in the part Field-induced phase transformations result from the phase transitions of these so-called high-conductivity domains or low-resistance channels.Existing results have shown that the conditions that contribute to the formation of these channels and the interface of the measuring metal electrode / organic thin film and the microscopic topography of the film are Very close relationship. Interface conditions