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In this paper, main characteristicsof the recombination-generation (R-G) current of thebulk traps in SOI gated-diode have been analyzed nu-merically. By using the simulation tool, ISE-DESSIS,the dependence of the R-G current on the bulk trapcharacteristics has been demonstrated and the in-fluence of silicon film structure has been examined.Moreover, we have reproduced the experimental re-sults of a SOI lateral p+p-n+ diode. Agreements be-tween the simulation and experiments indicate the R-G current is an effective pointer for monitoring thebulk traps of SOI devices.