论文部分内容阅读
我们采用半导体平面工艺技术,制造栅绝缘膜为Si_3N_4/SiO_2的n沟道耗尽型氢离子敏感半导体器件,再在栅绝缘膜上通过溅射等方法制造一层以季铵盐为活性物质的PVC膜;然后把器件灌封在聚乙烯塑料管中。将铬离子敏感
We use semiconductor planar technology to fabricate n-channel depleted hydrogen-ion-sensitive semiconductor devices with a gate insulating film of Si_3N_4 / SiO_2. A quaternary ammonium salt-based active material is then deposited on the gate insulating film by sputtering or the like PVC film; then potting the device in a polyethylene plastic tube. Chromium ion sensitive