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A novel voltage-controlled oscillator(VCO) topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage gain from output nodes of the tank to the gate node of the cross-coupled transistor. Theoretical analysis using timevarying phase noise theory derives closed-form symbolic formulas for the 1/f~2 phase noise region, showing that this feedback path could improve the phase noise performance. The proposed VCO is fabricated in TSMC 0.13 m CMOS technology. Working under a 0.3 V supply voltage with 1.2 m W power consumption, the measured phase noise of the VCO is –119.4 d Bc/Hz at 1 MHz offset frequency from the carrier of 4.92 GHz, resulting in an Fo M of 192.5 d Bc/Hz.
A novel voltage-controlled oscillator (VCO) topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage gain from output nodes of the tank to the Theoretical analysis using timevarying phase noise theory derives closed-form symbolic formulas for the 1 / f ~ 2 phase noise region, showing that this feedback path could improve the phase noise performance. The proposed VCO is fabricated in TSMC 0.13 m CMOS technology. Working under a 0.3 V supply voltage with 1.2 m W power consumption, the measured phase noise of the VCO is -119.4 d Bc / Hz at 1 MHz offset frequency from the carrier of 4.92 GHz, resulting in an Fo M of 192.5 d Bc / Hz.