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合成了六个多氟代季成四芳醚类化合物,并且对部分化合物掺杂于SiO_2薄膜的介电性质进行了研究。当氟原子掺杂浓度(F/Si)为1％时,薄膜介电常数K值小于3。
Six polyfluorinated quarternary tetraaryl ethers were synthesized, and the dielectric properties of some compounds doped in SiO_2 thin films were studied. When the fluorine atom doping concentration (F / Si) is 1%, the film dielectric constant K value is less than 3.