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在(0001)蓝宝石衬底上利用金属有机化学气相沉积系统,分别生长含有p-AlGaN电子阻挡层和反对称n-AlGaN层的双蓝光波长发射的InGaN/GaN混合多量子阱发光二极管(LED)。结果发现,与传统的具有p-AlGaN电子阻挡层的双蓝光波长LED相比,这种n-AlGaN层能有效改善电子和空穴在混合多量子阱活性层中的分布均匀性和减少电子溢出,并减弱双蓝光发射光谱对电流的依赖性。此外,基于这种双蓝光波长发射的芯片与YAG:Ce荧光粉封装成白光LED能实现高显色性的白光发射,在20 mA电流驱动下,6500 K色温时显色指数达到91,而基于单蓝光芯片的白光LED显色指数只有75。
InGaN / GaN mixed multiple quantum well light emitting diode (LED) with dual blue wavelength emission containing a p-AlGaN electron blocking layer and an anti-symmetric n-AlGaN layer is grown on a (0001) sapphire substrate by using a metal organic chemical vapor deposition system. . It has been found that the n-AlGaN layer can effectively improve the uniformity of the distribution of electrons and holes in the active layer of the mixed multiple quantum well and reduce the electron spillover compared with the conventional dual blue wavelength LED with the p-AlGaN electron blocking layer , And weaken the current dependence of the double blue emission spectrum. In addition, based on this dual blue wavelength emitting chip and YAG: Ce phosphor package into a white LED can achieve high color rendering of white light emission, 20 mA current drive, 6500 K color temperature color rendering index reached 91, and based on Single-blue chip white LED color rendering index is only 75.