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基于传统晶闸管单扩散p层杂质浓度分布很难协调阻断电压、通流能力、通态压降、反向恢复电荷和关断时间之间的矛盾,无法使特高压晶闸管的通流能力由4 000 A提高到4 500 A。对特高压晶闸管采用低浓度p-层穿透、高浓度p+层发射极结构设计进行了理论分析并进行了工艺实验,测试结果表明,特高压晶闸管在不损失阻断电压(≥8 500 V)前提下,芯片厚度减薄0.05 mm、通态压降下降0.11 V,反向恢复电荷、dV/dt耐量、di/dt耐量、关断时间等得到优化,研制了6英寸(1英寸=2.54 cm)4 500 A/8 500 V特高压晶闸管,并成功应用于±800 kV/7 200 MW特高压直流输电工程中。
Based on the conventional thyristor single-diffused p-layer impurity concentration distribution, it is difficult to coordinate the contradiction between blocking voltage, through-flow capability, on-state voltage drop, reverse recovery charge and turn- 000 A to 4 500 A. The design of UHV thyristor with low-concentration p-layer penetration and high-concentration p + layer emitter structure was theoretically analyzed and the process experiment was carried out. The test results show that the UHV thyristor has good performance in blocking voltage (≥8 500 V) Under the prerequisite, the chip thickness is reduced by 0.05 mm, the on-state voltage drop is reduced by 0.11 V, the reverse recovery charge, dV / dt tolerance, di / dt tolerance and turn-off time are optimized. ) 4 500 A / 8 500 V thyristor and has been successfully used in ± 800 kV / 7 200 MW UHVDC transmission projects.