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高分辨率Ge(Li)γ射线探测器有两个固有的缺点:一是锂的迁移率太大,探测器必须长期保存在液氮温度,其次是锂离子漂移过程很长。为了得到在室温下稳定的Ge探测器,进行了大量的探索。在高纯Ge问世之前,1964年采用γ射线在Ge中产生受主缺陷来补偿N型Ge的方法构成辐射型Ge探测器[简称Ge(γ)探测器]。这种探测器在室温下是稳定的,工艺周期短并有薄的入射窗。有些实验室还得到了能量分辨率高达(0.5—0.2)％(γ射线能量为662keV)的Ge(γ)探测器,并构成
High-resolution Ge (Li) γ-ray detectors have two inherent disadvantages: First, the mobility of lithium is too large, the detector must be stored at liquid nitrogen temperature for a long time, followed by a long lithium-ion drift. In order to obtain a stable Ge detector at room temperature, a great deal of exploration has been done. Prior to the advent of high-purity Ge, a method of compensating for N-type Ge by using γ-rays in Ge to produce acceptor defects in 1964 constituted a Ge-type detector [referred to as Ge (γ)]. The detector is stable at room temperature, has a short process cycle and has a thin entrance window. Some laboratories have also obtained Ge (gamma) detectors with energy resolution up to (0.5-0.2)% (gamma ray energy of 662 keV)