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美国国家半导体公司(National Semiconductor)6月21日宣布,推出业界首款针对高压电源转换器的增强型氮化镓(GaN)功率场效应晶体管(FET)而优化的100 V半桥栅极驱动器。美国国家半导体新推出的LM5113是一款高度集成
National Semiconductor announced June 21 that it is introducing the industry’s first 100 V half-bridge gate driver optimized for enhanced gallium nitride (GaN) power field effect transistors (FETs) for high-voltage power converters. National Semiconductor’s new LM5113 is a highly integrated