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提出了热丝化学气相淀积法，在低温（６００－７５０℃）下成功地生长出硅上单晶碳化硅薄膜，Ｘ光衍射谱、喇曼光谱证实了外延膜的单晶结构，光致发光测量证明外延ＳｉＣ材料室温下可稳定发射可见光。
A hot filament chemical vapor deposition method was proposed to successfully grow monocrystalline silicon carbide thin films on silicon at low temperature (600-750 ℃). X-ray diffraction and Raman spectra confirmed the single crystal structure of the epitaxial films. Luminescence measurements show that epitaxial SiC material can emit visible light stably at room temperature.