介绍了一种用于高密度近场存储领域的新型微小孔径激光器(VSAL)。为了解决由腔面金属膜造成的激光器PN结短路的问题,在激光器中引入了窗口隔离区,不仅降低了器件制备的难度,而且也提高了器件的性能和成品率。采用聚焦离子束刻蚀技术成功地制备了输出功率为0 3mW的激光器,利用矩阵方法通过远场测量值估算了激光器的近场分布。 A new type of small aperture laser (VSAL) for high-density near-field storage is presented. In order to solve the problem of short-circuiting the laser PN junction caused by the cavity metal film, a window isolation region is introduced in the laser, which not only reduces the difficulty of device preparation but also improves the performance and the yield of the device. The laser with output power of 0 3mW was successfully fabricated by focused ion beam etching technique. The near-field distribution of the laser was estimated by the far-field measurement.