论文部分内容阅读
本文介绍了一种制作金属窄条的新方法。将SiO_2衬底上光刻形成的NiSi_2线条进行氧化。所形成的SiO_2层可从硅化物中吸收大多数Si,留下完全被SiO_2限定的Ni线条。本文讨论了有关的问题和可能的应用。
This article describes a new method of making metal strips. The NiSi 2 lines formed on the SiO 2 substrate by photolithography were oxidized. The resulting SiO 2 layer can absorb most of the Si from the silicide, leaving the Ni line completely bound by SiO 2. This article discusses the related issues and possible applications.