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A new technique know as“MOS Constant Current Quasi-static Small-Signsl Technique”by whichquasi-static capacitance,high frequency capacitance,and semiconductor surface potential of a MOS capaci-tor can be measured simultaneously is proposed.The low interface states densities and its distribution of Si-Sio_2 system can be rapidly and accurately determined by this technique.By the use of synchronousdifferential amplification technique with limited amplitude,the sensitivity of measuring interface statesdensities can be raised about an order of magnitude.
A new technique know as “MOS Constant Current Quasi-Static Small-Signs Technique” by which quasi-static capacitance, high frequency capacitance, and semiconductor surface potential of a MOS capaci-tor can be measured simultaneously is proposed. The low interface states densities and its distribution of Si-Sio_2 system can be rapidly and accurately determined by this technique. By the use of synchronous differential amplification technique with limited amplitude, the sensitivity of measuring interface statesdensities can be raised about an order of magnitude.