论文部分内容阅读
在解析热分析理论的基础上,建立了平板Nd:LuVO_4激光晶体在激光二极管阵列侧面抽运时的导热微分方程。通过对方程的求解,得到了Nd:LuVO_4晶体内部温度场解析式,热形变场分布、温度场和热形变场的数值模拟表明,当抽运光功率为40 W,抽运区域为1 mm× 4 mm时,晶体在x方向的最高相对温升为11.63 K.y和z方向的最高温升为11.00 K;在x,y,z三方向上的热形变量分别为0.050 μm,0.034μm和0.48μm。这一结果可为Nd:LuVO_4激光器设计提供理论支持。
Based on the analysis of thermal analysis theory, the differential thermal conduction equation of a flat Nd: LuVO_4 laser crystal on the side of a laser diode array is established. By solving the equation, the analytical solution of the temperature field, the distribution of the thermal deformation field, the temperature field and the thermal deformation field of the Nd: LuVO_4 crystal are obtained. The numerical simulation shows that when the pump power is 40 W and the pumping area is 1 mm × At 4 mm, the maximum relative temperature rise of the crystal in the x direction was 11.63 Ky and the maximum temperature rise in the z direction was 11.00 K. The thermal deformations in the x, y and z directions were 0.050 μm, 0.034 μm and 0.48 μm, respectively. This result can provide theoretical support for Nd: LuVO_4 laser design.