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作为光通信系统的光源发光二极管(LED)具有价廉、可靠和发射功率随温度变化不大等优点,所以在很多系统中得到广泛应用。为了实现可靠的光通信系统,GaAs-Ga_(1-α)Al_αAsLED在高电流密度下工作时的退化是近年来国际上颇感兴趣的研究课题之一。本文研究了小面积高辐射度GaAs-Ga_(1-α)Al_αAs双异质结(DH)LED的退化现象,讨论退化的几种形式和可能的原因,提出了影响退化的主要因素和改进意见。一、实验方法实验所用的小面积高辐射度GaAs-Ga_(1-α)Al_αAs发光二极管是双异质结构。双异质结材料由液相外延法生长。器件的发射面积由SiO_2层上的“接触窗口”(φ35微米)来限定。退化实验一般是在室温、100毫安
As light source light-emitting diode (LED) of optical communication system, it has the advantages of low cost, high reliability and low power variation with temperature. Therefore, it is widely used in many systems. In order to achieve a reliable optical communication system, the degradation of GaAs-Ga_ (1-α) Al_αAsLEDs at high current densities has been one of the most interesting international topics in recent years. In this paper, the degeneration phenomenon of GaAs-Ga 1-α Al a AsAs double heterostructure (DH) LED with small area and high emissivity is studied. Several forms of degeneration and possible reasons are discussed. The main factors that affect degeneration and the suggestions for improvement are put forward . First, the experimental method used in the experiment of small-area high-emissivity GaAs-Ga_ (1-α) Al_αAs LED double heterostructure. Double heterojunction materials are grown by liquid-phase epitaxy. The emission area of the device is defined by the “contact window” (φ 35 μm) on the SiO 2 layer. Degradation experiments are generally at room temperature, 100 mA