GaSb单晶是制备光电器件的重要衬底材料。GaSb价带自旋轨道的分裂可以得到使空穴离化系数增大的能级,明显改善了波长大于1.3μm的APD的信噪比。其它如AlGaSb APD、GaAlAsSb LED与LD、AlSb/GaSb超晶格、高度电子器件InAs/GaSb超晶格、低阈值HET、FET、HBT等器件也采用GaSb为衬底。此外,GaSb单 GaSb single crystal is an important substrate material for the preparation of optoelectronic devices. The cleavage of the GaSb valence band spin orbit results in an energy level that increases the hole ionization coefficient, significantly improving the signal-to-noise ratio of the APD at wavelengths longer than 1.3 μm. Others such as AlGaSb APD, GaAlAsSb LED and LD, AlSb / GaSb superlattice, highly electronic InAs / GaSb superlattice, low threshold HET, FET, HBT and other devices also use GaSb substrate. In addition, GaSb single