典型的具有单晶硅膜片的普通硅压阻式压力传感器,通常压力要限定在远小于10倍满量程压力以下。而我们制造了一批传感器,它在膜片下使用一个静止的表面,可使传感器耐受了大于500倍以上的满量程压力。这些传感器采用单晶硅材料,用烧结工艺制成。在低压下硅芯片的灵敏度可高达3mV/V·psi(3mV/V·6.89kPa≈0.435mV/V·1kPa)。已设计出在10psi压力下输出为100mV的传感器,能耐受住5000psi A typical silicon piezoresistive pressure sensor with a monocrystalline silicon diaphragm is typically limited to pressures well below 10 times the full scale pressure. And we’ve made a bunch of sensors that use a static surface beneath the diaphragm, which allows the sensor to withstand full-scale pressures greater than 500 times. These sensors use single crystal silicon materials, made with a sintering process. The sensitivity of the silicon chip can be as low as 3mV / V · psi (3mV / V · 6.89kPa≈0.435mV / V · 1kPa). A sensor designed to output 100mV at 10psi pressure has been designed to withstand 5000psi