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研究了1.5μm波长InGaAsP/InP双异质结发光二极管的载流子限制层组分对辐射性能的影响。从精确的光谱测量发现用一般液相外延法生长的限制层会使有源层中电子越过异质势垒而漏入限制层。引进了一种生长InP限制层的新技术,使这一问题得到了解决。这一新技术采用了低温和厚熔液。从而辐射率提高了50％以上,在100mA下耦合入纤功率大于20μW(50μm芯径、0.2数值孔径、梯度光纤)。
The influence of carrier confinement layer composition on the radiation performance of 1.5μm wavelength InGaAsP / InP double heterostructure LED was studied. From the accurate spectroscopic measurements, it was found that the confinement layer grown by general liquid-phase epitaxy leaks electrons from the active layer into the confinement layer across the hetero-barrier. This problem has been solved by introducing a new technology for growing the InP confinement layer. This new technology uses low temperature and thick melt. The emissivity is thus increased by more than 50% and the coupling power into the fiber is greater than 20μW (50μm core diameter, 0.2 numerical aperture, gradient optical fiber) at 100mA.