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用PECVD薄膜沉积方法 ,成功地制备了磷掺杂纳米硅 (nc Si:H(P) )薄膜 .用扫描隧道电镜 (STM )、Raman散射、傅里叶变换红外吸收 (FTIR)谱、电子自旋共振 (ESR)、共振核反应 (RNR)技术对掺磷纳米硅进行了结构分析 ,确认了样品的微结构为纳米相结构 .掺磷后膜中纳米晶粒的平均尺寸d减小 ,一般在 2 5— 4 5nm之间 ,且排列更加有序 .掺磷nc Si:H膜具有较高的光吸收系数 ,光学带隙在 1 73— 1 78eV之间 ,和本征nc Si:H相同 .掺杂nc Si:H薄膜电导率在 10 -1— 10 1Ω-1·cm-1之间 ,比本征nc Si:H提高了二个数量级 ,室温暗电导最高已达 5 0 5Ω-1·cm-1.同时电导激活能在 0 0 1— 0 0 3eV之间 ,比本征nc Si:H进一步降低
Phosphorus-doped nanocrystalline silicon (nc Si: H (P)) thin films were successfully prepared by PECVD thin film deposition method, and were characterized by scanning electron microscopy (STM), Raman scattering, Fourier transform infrared spectroscopy (FTIR) (ESR) and resonance nuclear reaction (RNR), the microstructure of the sample was confirmed to be nanophase structure.The average size d of the nanocrystalline grains in the film after phosphorus doping decreased, 2 5-4 5nm, and the arrangement is more orderly.The phosphorus doped nc Si: H film has a higher optical absorption coefficient, the optical band gap is between 1 73-1 78 eV, which is the same as the intrinsic nc Si: H. The conductivity of doped nc Si: H films is between 10 -1 -10 1Ω-1 · cm-1, which is two orders of magnitude higher than intrinsic nc Si: H. cm-1. At the same time, the conductance activation energy is between 0 0 1 0 0 0 3eV, which is lower than the intrinsic nc Si: H