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根据器件实际工作情况,找出SOI器件与传统器件的不同,建立并研究了SOI SiGe HBT集电结渡越时间模型。结果表明,模型与集电区掺杂浓度、集电结偏置电压、传输电流有关,电流的增加恶化了渡越时间,进一步恶化了器件性能。所建模型与仿真结果一致。SOI SiGe HBT集电结渡越时间模型的建立和扩展为SOI BiCMOS工艺的核心参数,如特征频率的设计,提供了有价值的参考。
According to the actual work of the device, the difference between the SOI device and the traditional device is found out, and the transition time model of the SOI SiGe HBT collector junction is established and studied. The results show that the model is related to the concentration of collector region, collector bias voltage and transmission current. The increase of current deteriorates the transit time and further deteriorates the device performance. The model is consistent with the simulation results. The establishment and expansion of SOI SiGe HBT collector junction transit time model provide the valuable reference for the core parameters of SOI BiCMOS process, such as the design of the characteristic frequency.