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通过解一维泊松方程,对均匀掺杂的MISIS结构进行模拟,研究了表层硅厚度对该结构中电势分布和载流子浓度分布的影响.模拟结果表明:在加栅压V_G时,表层硅中同时存在一个耗尽区和积累区,在耗尽区和积累区中间至少存在一个电中性点.在表层硅厚度大于相应的最大耗尽层宽度的1.6倍时,表层硅厚度对MISIS结构性质无影响.本文还从理论上推导出厚表层硅情况下的MISIS结构理想C(V)关系,并得到与实验相符合的结果.研究结果表明:C(V)特性对于研究MISIS结构中的参数,具有分析一般MIS结构相同的功能.
By solving the one-dimensional Poisson equation, the uniformly doped MISIS structure is simulated to study the effect of surface silicon thickness on the potential distribution and carrier concentration distribution in the structure.The simulation results show that when the gate voltage V_G is added, There is at least one depletion zone and accumulation zone in silicon and at least one electric neutral point in the depletion zone and accumulation zone.When the surface silicon thickness is greater than 1.6 times of the corresponding maximum depletion zone width, The structure of the MISIS structure has no influence on the MISIS structure. The ideal C (V) relationship of the MISIS structure in the case of thick surface Si is deduced theoretically and the result is in good agreement with the experiment. The results show that the C (V) Of the parameters, with the same general analysis of the structure of MIS functions.