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石墨烯的导电能力在室温下,石墨中的电子可以比其他材质中的电子移动速度更快。但是,以往将石墨烯片切割成为石墨烯带的技术会在材料中留下纳米尺度的粗糙边缘,这将会阻碍电子的流动。美国佐治亚理工学院的物理学家沃尔特·德希尔(Walt de Heer)带领的研究团队制成了长度超过10微米、中途没有任何阻碍的石墨烯带,这比以往的研究成果要好1000倍,甚至比传统理论上预测的还要好10倍。无阻碍的电子运动,意味着这些导体可以更快地传输信号,而没有传统半导体芯片中的过热问题。该团队没有按照传统的方法(将较宽的石墨烯片切割成石墨烯带)来处理,而是让石墨在碳化硅晶体的脊状边缘上生长。研究者通过特殊的工序,将实验材料加热到1000℃以上。硅原子蒸发后,就会留下40纳米宽的石墨层。德希尔说,这样就不会在石墨中产生粗糙的边缘来阻碍电子的运动了。
Electrical conductivity of graphene At room temperature, electrons in graphite can move faster than electrons in other materials. However, the prior art of cutting graphene sheets into graphene sheets left nano-sized, rough edges in the material that would impede the flow of electrons. A team led by Walt de Heer, a physicist at Georgia Tech, made graphene ribbons longer than 10 microns without any hindrance, which is 1,000 times better than previous studies and even 10 times better than the traditional theoretical prediction. Unobstructed electronic motion means that these conductors can transmit signals faster without overheating in conventional semiconductor chips. Instead of following the traditional approach of cutting a wider graphene sheet into graphene strips, the team grew graphite on the ridged edges of the silicon carbide crystals. The researchers through a special process, the experimental material is heated to above 1000 ℃. After the silicon atoms have evaporated, a graphite layer 40 nm wide will be left behind. Deshir said that this would not hinder the movement of electrons in the rough edge of graphite.