CMOS集成电路问世以来,以它的高速,高抗干扰性,低功耗的优点得到人们的重视,由于工艺问题,成本问题逐步得到解决,现在已广泛的应用到各个领域中去,这就促使人们对CMOS集成电路的结构形式,设计方法,工艺手段进行更深入细致的研究,一些新的设计方法,新的结构形式,新的工艺手段不断出现。两年来我们进行了一点工作,设计了一些频率在1～5MC,直流噪容大于3伏,驱动电流大于0.5mA的各种类型的CMOS集成电路,逆用Al栅工艺和复合栅介 Since the advent of CMOS integrated circuits, it has gained people’s attention due to its advantages of high speed, high noise immunity and low power consumption. Since the process and cost problems have been solved gradually, CMOS integrated circuits have been widely used in various fields, People have a more in-depth and meticulous research on the structure, design method and technological means of CMOS integrated circuits. Some new design methods, new structural forms and new technological means are emerging constantly. In the past two years, we have done some work to design various types of CMOS integrated circuits with frequency of 1 ~ 5MC, DC noise greater than 3V, and driving current greater than 0.5mA, reverse Al gate technology and composite gate dielectric