论文部分内容阅读
设计了一种采用BiFET结构的低噪声放大器(LNA),这种结构通过BiCMOS工艺使低噪声放大电路集合了双极型晶体管的低噪声特性和CMOS晶体管的高线性度。应用优化的BiFETCascode共源共栅结构能够明显地提高低噪声放大器的性能,并且能应用于两个不同频率。本文设计的低噪声放大器在低偏置电流(1.7mA)和低功耗(5.7mW)的情况下能取得1.69dB的噪声系数、15.96dB的电压增益、-8.5dBm的IIP3和-67dB的反向隔离。设计的BiFET低噪声放大器是采用了AMS0.8μm的BiCMOS混合信号工艺,经过优化可以用于工业、室内的远程无线控制系统包括无线门禁系统。
A low noise amplifier (LNA) using a BiFET structure is designed. This structure allows the low noise amplifier to combine the low noise characteristics of a bipolar transistor with the high linearity of a CMOS transistor through the BiCMOS process. The application of optimized BiFETCascode cascode structure can significantly improve the performance of low-noise amplifier, and can be applied to two different frequencies. The low noise amplifier designed in this paper can achieve a noise figure of 1.69dB, a voltage gain of 15.96dB, an IIP3 of -8.5dBm and an inverse of -67dB at low bias current (1.7mA) and low power consumption (5.7mW) Isolated. The BiFET low noise amplifier is designed with an AMS 0.8μm BiCMOS mixed-signal process and is optimized for industrial use. The indoor long-range wireless control system includes a wireless access control system.