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Negative bias-temperature instability in silicon dioxide films grown by a rapid thermal processing has been investigated. Rapid thermal oxide metal-oxide-semiconduc!or(RTOMOS) structures have a lower negative bias-temperature instabllity(NBTI) than the furnace oxide MOS structures, although the former has a higher NBTI than the latter at room temperature if both do not receive a post-metallization annealing. The effects of the temperature and time during the post oxidation annealing in argon, the cooling race after a rapid thermal processing and the temperature of post metallization annealing in forming gas on NBTI were studied. The rapid thermal post-oxidation annealing in argon has an ability to reduce the NBTI degree of either rapid thermal oxide or furnace oxide. The post metallization annealing in forming gas at 360℃ can eliminate the NBTI introduced by radiation during metallization, but could not get rid of the NBTI introduced by a post oxidation processing in oxygen. In addition, a kinetics of the flat-band voltage shift was observed oa rapid thermal oxide MOS structures, which helps understand the mechanism on NBTI.
Rapid thermal oxide metal-oxide-semiconduc! Or (RTOMOS) structures have a lower negative bias-temperature instabllity (NBTI) than the furnace oxide MOS structures , although the former has a higher NBTI than the latter at room temperature if both do not receive a post-metallization annealing. The effects of the temperature and time during the post oxidation oxidation in argon, the cooling race after a rapid thermal processing and the temperature of post metallization annealing in forming gas on NBTI were studied. The rapid thermal post-oxidation annealing in argon has an ability to reduce the NBTI degree of either rapid thermal oxide or furnace oxide. The post metallization annealing in forming gas at 360 ° C can eliminate the NBTI introduced by radiation during metallization, but could not get rid of the NBTI introduced by a post oxidation processing in oxygen. ion, a kinetics of the flat-band voltage shift was observed oa rapid thermal oxide MOS structures, which helps understand the mechanism on NBTI.