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由于有些氧化物半导体,如ZnO、In_2O_3、SnO_2、ITO(铟锡氧化物)具有透明导电的性质,它们的应用也越来越广泛。例如,在太阳电池中用做透明导电电极,或作电池的顶层材料形成SIS(半导体-绝缘体-半导体)电池及作抗反射层等。但一般的纯氧化物半导体电阻很大,所以用于上述情况时,必须要经过掺杂或还原等处理,降低电阻率才能使用。为此,对SnO_2、In_2O_3、ITO以及ZnO已有很多制备方法及掺杂等处理的研究报导,并已制成1×10~(-4)Ω·cm左右的薄膜材料。但用化学喷涂热解法制备ZnO薄膜的报导较少。最近,J.Aranovich等人用喷涂法制备了ZnO薄膜,并用氢气还原法把电阻率降低到10~(-3)Ω·cm左右。
Some oxide semiconductors, such as ZnO, In 2 O 3, SnO 2 and ITO (Indium Tin Oxide), are more and more widely used because of their transparent and conductive properties. For example, an SIS (Semiconductor-Insulator-Semiconductor) battery is formed as a transparent conductive electrode in a solar battery or as a top material of a battery, and an antireflection layer or the like is formed. But the general pure oxide semiconductor resistance is very large, so when used in the above situation, must go through doping or reduction treatment, reduce the resistivity to use. For this reason, many preparation methods and doping treatments of SnO 2, In 2 O 3, ITO and ZnO have been reported and have been made into thin film materials of about 1 × 10 -4 Ω · cm. However, there are few reports of ZnO thin films prepared by chemical spray pyrolysis. Recently, J. Aranovich et al. Prepared a ZnO thin film by a spraying method and reduced the resistivity to about 10 -3 Ω · cm by a hydrogen reduction method.