测量了高质量的单晶膜La2 -xSrxCuO4(x =0 10 ,0 2 0 ,0 2 5 )的电阻率和热电势 .La1 9Sr0 1 CuO4电阻率呈现S型行为 ,表明存在一个赝能隙 ,在赝能隙态可以用公式 ρ =ρ0 +βexp(-Δ T)很好地拟合 .热电势的测量表明 ,在超导转变前样品的残余热电势值非常小 ,这是膜的高质量引起的 ,三个样品在 2 0 0K以上都出现一个宽峰 ,对其进行了一些理论模型分析 ,并与电子型超导体热电势结果作了比较 . The resistivity and thermopower of La2-xSrxCuO4 (x = 0 10, 0 2 0, 0 2 5) were measured for high quality single crystal films.The resistivity of La1 9Sr0 1 CuO4 showed S-type behavior, indicating the presence of a pseudogammagap, The pseudogap could be fitted well by the formula ρ = ρ0 + βexp (-ΔT). The thermopower measurements show that the residual thermoelectric potential of the sample before the superconducting transition is very small, which is the result of the high quality of the film , All the three samples showed a broad peak above 200K. Some theoretical models were analyzed and compared with the thermoelectric potential of the electronic superconductor.