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本文对Cd_2Sb_2O_(6.8)半导体陶瓷在-78～+1000℃温区及氧、氮、氩、空气、甲烷、CO/CO_2等气氛中进行了导电性能的测试研究。分析了过量氧化镉在品格中的存在形式、氧空位与气氛的关系、不同温区内的导电机理及有关缺陷结构。计算出相应的激活能与迁移率。 文中还指出了这类半导体陶瓷的可能应用场合与尚待解决的问题。
In this paper, the conductive properties of Cd_2Sb_2O_ (6.8) semiconducting ceramics in the temperature range of -78 ~ + 1000 ℃ and oxygen, nitrogen, argon, air, methane and CO / CO_2 were studied. The existing forms of excessive cadmium oxide in the character, the relationship between oxygen vacancies and the atmosphere, the conduction mechanism in different temperature zones and the related defect structures were analyzed. Calculate the corresponding activation energy and mobility. The article also pointed out the possible applications of such semiconductor ceramics and the problems to be solved.