日本某公司研制成功一种超大规模集成电路新技术.这是一种称之为BOX法的新的元件隔离技术.它是在用干法腐蚀制成的硅基板的沟槽中去掉隔离区内的硅,然后分两步填入硅氧化绝缘膜.第一步只在元件区周围留下细沟,而其余部分填人绝缘物;第二步再在细沟中有选择地积一层绝缘膜,以实现元件之间有良好的绝缘. A Japanese company successfully developed a new VLSI technology, a new method of component isolation called the BOX method, which removes the isolation region from the trenches of a silicon substrate made by dry etching Of the silicon, and then fill the silicon oxide insulating film in two steps. The first step only left in the area around the thin rickety, while the rest filled with insulation; the second step in the rill and then selectively a layer of insulation Film to achieve good insulation between components.